SU-8 passivation of type-II InAs/GaSb strained layer superlattice detectors

H. S. Kim; E. Plis; N. Gautam; A. Khoshakhlagh; S. Myers; M. N. Kutty; Y. Sharma; L. R. Dawson; S. Krishna

doi:10.1117/12.850284

3 May 2010 SU-8 passivation of type-II InAs/GaSb strained layer superlattice detectors

H. S. Kim, E. Plis, N. Gautam, A. Khoshakhlagh, S. Myers, M. N. Kutty, Y. Sharma, L. R. Dawson, S. Krishna

Proceedings Volume 7660, Infrared Technology and Applications XXXVI; 76601U (2010) https://doi.org/10.1117/12.850284
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

We report on surface passivation studies for type-II InAs/GaSb superlattice (SL) PIN detectors designed to operate in the mid-wave infrared (MWIR) region and the long wavelength infrared (LWIR) spectrum. The two SL structures were grown by molecular beam epitaxy and processed into mesa diodes using standard lithography. A simple spin on photoresist, SU-8, was used to passivate the sample after a wet etch. Optical and electrical measurements were then undertaken on the two devices. The dark current density of a single pixel device with SU-8 passivation is reduced by four orders of magnitude and by a factor of eight compared to devices without any passivation for the MWIR and LWIR pin detectors, respectively, at 77K.

Citation Download Citation

H. S. Kim, E. Plis, N. Gautam, A. Khoshakhlagh, S. Myers, M. N. Kutty, Y. Sharma, L. R. Dawson, and S. Krishna "SU-8 passivation of type-II InAs/GaSb strained layer superlattice detectors", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76601U (3 May 2010); https://doi.org/10.1117/12.850284

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