High operating temperature MWIR detectors

M. A. Kinch; H. F. Schaake; R. L. Strong; P. K. Liao; M. J. Ohlson; J. Jacques; C.-F. Wan; D. Chandra; R. D. Burford; C. A. Schaake

doi:10.1117/12.850965

3 May 2010 High operating temperature MWIR detectors

M. A. Kinch, H. F. Schaake, R. L. Strong, P. K. Liao, M. J. Ohlson, J. Jacques, C.-F. Wan, D. Chandra, R. D. Burford, C. A. Schaake

Author Affiliations +

Proceedings Volume 7660, Infrared Technology and Applications XXXVI; 76602V (2010) https://doi.org/10.1117/12.850965
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

The utilization of the non-equilibrium photodiode concept for high operating temperature (HOT) FPAs is discussed, both generically, and with regard to the specific example of MWIR HgCdTe. The issues of dark current, surface passivation, and 1/f noise are considered for three different architectures, namely N⁺/N^-/P⁺, N⁺/P^-/P⁺, and nBn. These architectures are examined with regard to possible FPA performance limitations, and potential difficulty in reduction to practice. Performance data obtained at DRS for the N⁺/N^-/P⁺ and N⁺/P^-/P⁺ HgCdTe architectures will be presented.

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M. A. Kinch, H. F. Schaake, R. L. Strong, P. K. Liao, M. J. Ohlson, J. Jacques, C.-F. Wan, D. Chandra, R. D. Burford, and C. A. Schaake "High operating temperature MWIR detectors", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76602V (3 May 2010); https://doi.org/10.1117/12.850965

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