Mid-wavelength InAsSb detectors based on nBn design

A. Khoshakhlagh; S. Myers; E. Plis; M. N. Kutty; B. Klein; N. Gautam; H. Kim; E. P. G. Smith; D. Rhiger; S. M. Johnson; S. Krishna

doi:10.1117/12.850428

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3 May 2010 Mid-wavelength InAsSb detectors based on nBn design

A. Khoshakhlagh, S. Myers, E. Plis, M. N. Kutty, B. Klein, N. Gautam, H. Kim, E. P. G. Smith, D. Rhiger, S. M. Johnson, S. Krishna

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Proceedings Volume 7660, Infrared Technology and Applications XXXVI; 76602Z (2010) https://doi.org/10.1117/12.850428
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

The development of InAsSb detectors based on the nBn design for the mid-wave infrared (MWIR) spectral region is discussed. Comparisons of optical and electrical properties of InAsSb photodetectors with two different barrier material, namely, AlAs _0.15Sb_0.75 (structure A) and AlAs_0.10Sb_0.9 (structure B) are reported. The dark current density in the AlAs0.15Sb0.85 is lower possibly due to the larger valence band offset. Clear room temperature spectral responses is observed and a specific detectivity (D*) of 1.4x10¹² and 1.01x10¹² cmHz^1/2/W at 0.2 V, and a responsivity of 0.87 and 1.66 A/W under 0.2 V biasing at 77 K and 3.5 μm, assuming unity gain, was obtained for structures A and B, respectively.

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A. Khoshakhlagh, S. Myers, E. Plis, M. N. Kutty, B. Klein, N. Gautam, H. Kim, E. P. G. Smith, D. Rhiger, S. M. Johnson, and S. Krishna "Mid-wavelength InAsSb detectors based on nBn design", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76602Z (3 May 2010); https://doi.org/10.1117/12.850428

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