A distributed sensor system for detection of toxic and hazardous gases

Sazia A. Eliza; Robert Olah; Achyut K. Dutta

doi:10.1117/12.852796

5 May 2010 A distributed sensor system for detection of toxic and hazardous gases

Sazia A. Eliza, Robert Olah, Achyut K. Dutta

Proceedings Volume 7666, Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense IX; 76662W (2010) https://doi.org/10.1117/12.852796
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

This paper presents a distributed sensor system for the detection of toxic and hazardous gases like carbon monooxide (CO) and hydrogen (H₂), respectively. The system is based on AlGaN/GaN heterostructures with floating gates as the catalytic absorption surfaces for the target gases. Due to the presence of 2-dimensional electron gas (2-DEG) at the heterointerface, AlGaN/GaN based High Electron Mobility Transistor (HEMT) and Metal- Oxide-Semiconductor HEMT (MOS-HEMT) is highly sensitive to any changes in the surface charge conditions. The individual sensor is made selective towards a specific target by the design of different gate structures. From the simulation results, it has been found that this type of high mobility field-effect devices can be applied to detect very low concentrations of gases with widely linear sensor characteristics. The modeled AlGaN/GaN HEMT with the Pt floating gate can detect hydrogen gas with the least concentrations at the sub-ppb level and with the linear current variations for ~ ppb to 100 ppm level of hydrogen. For the MOSHEMT structure, we simulated sub-ppm detection of CO with the linearity of responses near 1000 ppm.

Citation Download Citation

Sazia A. Eliza, Robert Olah, and Achyut K. Dutta "A distributed sensor system for detection of toxic and hazardous gases", Proc. SPIE 7666, Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense IX, 76662W (5 May 2010); https://doi.org/10.1117/12.852796

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KEYWORDS

Sensors

Hydrogen

Carbon monoxide

Field effect transistors

Platinum

Gases

Gallium nitride

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