Paper
5 May 2010 EXX phenomena in macroscopic, microscopic, and nanoscopic structures
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Abstract
The new "EXX" phenomena in macroscopic, microscopic and nanoscopic metal-semiconductor hybrid structures is described. Here E = extraordinary and XX = magnetoresistance (EMR), piezoconductance (EPC), optoconductance (EOC), and electroconductance (EEC). This new class of phenomena is based on the control and dominance of the geometric contributions, e.g. sample shape, lead placement, the presence of inhomogenieties, etc., to the transport properties of a physical system in contrast to traditional transport phenomena which are dominated by the intrinsic properties, e.g. mobility, carrier density, band structure, etc. The underlying phyiscs of EXX phenomena is elucidated with particular emphasis on the use of analytic and finite element analysis methods to quantitatively account for the observed EXX signal enhancement. The potential application of EXX phenomena to the study of the biologically relevant properties of cells such as surface charge density will be described.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. A. Solin "EXX phenomena in macroscopic, microscopic, and nanoscopic structures", Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76790B (5 May 2010); https://doi.org/10.1117/12.849887
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconductors

Metals

Resistance

Lead

Magnetism

Finite element methods

Interfaces

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