Semiconductor materials characterization and identification with THz radiation

Andre Sokolnikov

doi:10.1117/12.851185

5 May 2010 Semiconductor materials characterization and identification with THz radiation

Andre Sokolnikov

Proceedings Volume 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II; 76792C (2010) https://doi.org/10.1117/12.851185
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

Recently evolved THz technology opens up more possibilities for identification and characterization of different semiconductor crystal-based compounds. Since the THz waveform is essentially a direct manifestation of the crystal domain structure, the multicycle THz generation methods allow measuring of geometrical parameters of semiconductor internal structures as well as of dislocations and other structural defects. The above is useful for both characterization and identification of semiconductor materials. Further, methods of THz characterization of II-VI, III-V as well as tinary compounds are discussed. Computational techniques are suggested allowing the noise level reduction for the measurements.

Citation Download Citation

Andre Sokolnikov "Semiconductor materials characterization and identification with THz radiation", Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76792C (5 May 2010); https://doi.org/10.1117/12.851185

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