High-performance InGaAs/InP-based single-photon avalanche diode with reduced afterpulsing

Chong Hu; Xiaoguang Zheng; Joe C. Campbell; Bora M. Onat; Xudong Jiang; Mark A. Itzler

doi:10.1117/12.851356

29 April 2010 High-performance InGaAs/InP-based single-photon avalanche diode with reduced afterpulsing

Chong Hu, Xiaoguang Zheng, Joe C. Campbell, Bora M. Onat, Xudong Jiang, Mark A. Itzler

Proceedings Volume 7681, Advanced Photon Counting Techniques IV; 76810S (2010) https://doi.org/10.1117/12.851356
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

We report reduced afterpulsing for a high-performance InGaAs/InP single photon avalanche photodiode (SPAD) using a gated-mode passive quenching with active reset (gated-PQAR) circuit. Photon detection efficiency (PDE) and dark count probability (DCP) were measured at a gate repetition rate of 1 MHz. With a double-pulse measurement technique, the afterpulsing probability was measured for various hold-off times. At 230K, 0.3% afterpulsing probability for a 10 ns hold-off time was achieved with 13% PDE, 2×10^-6 DCP and 0.4 ns effective gate width. For the same hold off time, 30% PDE and 1×10^-5 DCP was achieved with 6% afterpulsing probability for an effective gate width of 0.7 ns.

Citation Download Citation

Chong Hu, Xiaoguang Zheng, Joe C. Campbell, Bora M. Onat, Xudong Jiang, and Mark A. Itzler "High-performance InGaAs/InP-based single-photon avalanche diode with reduced afterpulsing", Proc. SPIE 7681, Advanced Photon Counting Techniques IV, 76810S (29 April 2010); https://doi.org/10.1117/12.851356

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