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29 April 2010 High-performance InGaAs/InP-based single-photon avalanche diode with reduced afterpulsing
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We report reduced afterpulsing for a high-performance InGaAs/InP single photon avalanche photodiode (SPAD) using a gated-mode passive quenching with active reset (gated-PQAR) circuit. Photon detection efficiency (PDE) and dark count probability (DCP) were measured at a gate repetition rate of 1 MHz. With a double-pulse measurement technique, the afterpulsing probability was measured for various hold-off times. At 230K, 0.3% afterpulsing probability for a 10 ns hold-off time was achieved with 13% PDE, 2×10-6 DCP and 0.4 ns effective gate width. For the same hold off time, 30% PDE and 1×10-5 DCP was achieved with 6% afterpulsing probability for an effective gate width of 0.7 ns.
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Chong Hu, Xiaoguang Zheng, Joe C. Campbell, Bora M. Onat, Xudong Jiang, and Mark A. Itzler "High-performance InGaAs/InP-based single-photon avalanche diode with reduced afterpulsing", Proc. SPIE 7681, Advanced Photon Counting Techniques IV, 76810S (29 April 2010);

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