High Resolution Positive Photoresist For Submicron Photolithography

Hidekatsu Kohara; Hatsuyuki Tanaka; Masanori Miyabe; Yoshiaki Arai; Shingo Asaumi; Toshimasa Nakayama

doi:10.1117/12.940344

25 August 1987 High Resolution Positive Photoresist For Submicron Photolithography

Hidekatsu Kohara, Hatsuyuki Tanaka, Masanori Miyabe, Yoshiaki Arai, Shingo Asaumi, Toshimasa Nakayama

Proceedings Volume 0771, Advances in Resist Technology and Processing IV; (1987) https://doi.org/10.1117/12.940344
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

Optical lithography is achieving itself into submicron region. In the limitation of resolution for stepper there is a decrease in contrast and so it requires more exposure amount than that of D. Also it is not possible to achieve faithful transcription of fine pattern dimension. The resolution of TSMR-8800 which is developed as high resolution positive photoresist is 0.6 μm. Faithful transcription of the mask pattern is possible for 0.7 μm line and space pattern. It shows good properties compared with conventional photoresist.

Citation Download Citation

Hidekatsu Kohara, Hatsuyuki Tanaka, Masanori Miyabe, Yoshiaki Arai, Shingo Asaumi, and Toshimasa Nakayama "High Resolution Positive Photoresist For Submicron Photolithography", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); https://doi.org/10.1117/12.940344

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