Nonlinear silicon photonics

Kevin K. Tsia; Bahram Jalali

doi:10.1117/12.858153

17 May 2010 Nonlinear silicon photonics

Kevin K. Tsia, Bahram Jalali

Proceedings Volume 7719, Silicon Photonics and Photonic Integrated Circuits II; 771904 (2010) https://doi.org/10.1117/12.858153
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Citation Download Citation

Kevin K. Tsia and Bahram Jalali "Nonlinear silicon photonics", Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 771904 (17 May 2010); https://doi.org/10.1117/12.858153

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