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17 May 2010 Cu/p-Si Schottky photodetectors at 1.55 μm
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Abstract
In this paper the realization and the characterization of a resonant cavity enhanced photodetector (RCE), completely silicon compatible and working at 1.55 micron, is reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. In order to obtain a fabrication process completely compatible with standard CMOS silicon technology, a photodetector having copper (Cu) as Schottky metal has been realized. Performances devices in terms of responsivity, free spectral range, finesse are reported.
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M. Casalino, M. Gioffrè, G. Coppola, M. Iodice, L. Moretti, I. Rendina, and L. Sirleto "Cu/p-Si Schottky photodetectors at 1.55 μm", Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 77190R (17 May 2010); https://doi.org/10.1117/12.855994
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