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17 May 2010 Electrically driven hybrid Si/III-V lasers based on adiabatic mode transformers
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We report the first Silicon/III-V evanescent laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain, and the bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBR), and a surface-grating coupler. The supermode of this hybrid structure is controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the devices, almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side mode suppression ratio is as high as 20dB, and the fiber-coupled output power is ~7mW.
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B. Ben Bakir, N. Olivier, Ph. Grosse, S. Messaoudène, S. Brision, E. Augendre, P. Philippe, K. Gilbert, D. Bordel, J. Harduin, and J.-M. Fedeli "Electrically driven hybrid Si/III-V lasers based on adiabatic mode transformers", Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 77191F (17 May 2010);

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