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1 January 1987 The Improvement Of Stepper Process Latitude By Resist Process
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Abstract
The trend toward tighter design rules and larger chip sizes have driven the demand to obtain the ultimate performance from present steppers. In this study, the G-line steppers with 0.30 NA lens are used to print 1 micron geometries. It is found that the contrast enhanced resist process is feasible to print 1 micron geometries and a single layer resist process can be utilized to print 1 micron square contact by applying a sufficiently thin layer of resist to obtain a conformal coating over the topography. In addition, big contact on the mask should be sized to smaller sizes so that over-exposure can be utilized to open small contacts.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tony Y. Liu "The Improvement Of Stepper Process Latitude By Resist Process", Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); https://doi.org/10.1117/12.967048
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