Paper
27 April 2010 High-power narrow-linewidth optically pumped dilute nitride disk laser with emission at 589 nm
Tomi Leinonen, Antti Härkönen, Ville-Markus Korpijärvi, Mircea Guina, Ryan J. Epstein, James T. Murray, Gregory J. Fetzer
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Abstract
We demonstrate a dilute nitride (GaInAsN) based gain mirror capable of meeting the wavelength and linewidth requirements for laser guide stars. The mirror was grown by molecular beam epitaxy on a GaAs(100) substrate. The heat generated during laser operation was extracted from the active region with a wedged intracavity CVD diamond. An intracavity birefringent filter was employed for wavelength selection and a YAG etalon for linewidth narrowing. The laser radiation was intra-cavity frequency doubled to achieve emission at 589 nm. The frequency-doubled semiconductor disk laser emitted a narrow linewidth beam (~20 MHz) at 589 nm. In a free-running mode, the laser emitted more than 6W of yellow-orange light with a maximum conversion efficiency of 15.5%.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomi Leinonen, Antti Härkönen, Ville-Markus Korpijärvi, Mircea Guina, Ryan J. Epstein, James T. Murray, and Gregory J. Fetzer "High-power narrow-linewidth optically pumped dilute nitride disk laser with emission at 589 nm", Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 772016 (27 April 2010); https://doi.org/10.1117/12.854747
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Cited by 5 scholarly publications.
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KEYWORDS
Mirrors

Nonlinear crystals

Quantum wells

Crystals

Fabry–Perot interferometers

Semiconductor lasers

Disk lasers

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