Paper
18 May 2010 Current-voltage curves of PV metamaterial based on the nanostructured Si
Author Affiliations +
Abstract
Nanostructured Si devices based on a nanoscale Si-layered system may constitute an interesting system for enlarging optical and electrical functions in Si optoelectronic technology. Strong enough physical interactions transform the initial material, without changing its chemical composition, leading to a Si metamaterial. We report here some specific electrical properties which illustrate the complexity of the electron transport in test structures. I-V measurements on samples differentiated exclusively by their surface features are given for PV and photodiode modes as well as time-resolved current collection under stabilized voltage. The measurements have been carried out over a large range of solar light excitation intensities.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zbigniew T. Kuznicki "Current-voltage curves of PV metamaterial based on the nanostructured Si", Proc. SPIE 7725, Photonics for Solar Energy Systems III, 77251I (18 May 2010); https://doi.org/10.1117/12.856307
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Photovoltaics

Silicon

Photodiodes

Sun

Electron transport

Metamaterials

Nanostructuring

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