Dielectric functions and optical parameters of heavily doped and/or highly excited Si:P

M. Basta; Z. T. Kuznicki

doi:10.1117/12.856308

18 May 2010 Dielectric functions and optical parameters of heavily doped and/or highly excited Si:P

M. Basta, Z. T. Kuznicki

Proceedings Volume 7725, Photonics for Solar Energy Systems III; 77251J (2010) https://doi.org/10.1117/12.856308
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

A complete model for the heavily doped and/or highly excited Si:P dielectric function is presented in the limit of the free-carrier gas approach. New interesting features of Si:P dielectric functions are presented and discussed. The influence of dopants and free-carriers is taken into account independently and their common features usually assumed in the literature, are analysed. The influence of Drude damping time on the optical response of heavily doped Si:P is studied. All results are compared with experimental data.

Citation Download Citation

M. Basta and Z. T. Kuznicki "Dielectric functions and optical parameters of heavily doped and/or highly excited Si:P", Proc. SPIE 7725, Photonics for Solar Energy Systems III, 77251J (18 May 2010); https://doi.org/10.1117/12.856308

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