Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing

Siew Li Tan; Lionel J. J. Tan; Yu Ling Goh; Shiyong Zhang; Jo Shien Ng; John P. R. David; Igor P. Marko; Jeremy Allam; Stephen J. Sweeney; Alfred R. Adams

doi:10.1117/12.853912

13 May 2010 Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing

Siew Li Tan, Lionel J. J. Tan, Yu Ling Goh, Shiyong Zhang, Jo Shien Ng, John P. R. David, Igor P. Marko, Jeremy Allam, Stephen J. Sweeney, Alfred R. Adams

Author Affiliations +

Proceedings Volume 7726, Optical Sensing and Detection; 77261M (2010) https://doi.org/10.1117/12.853912
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

InGaAsN is a promising material system to enable low-cost GaAs-based detectors to operate in the telecommunication spectrum, despite the problems posed by the low growth temperature required for nitrogen incorporation. We demonstrate that InGaAsN p⁺-i-n⁺ structures with nominal In and N fraction of 10% and 3.8%, grown by molecular beam epitaxy (MBE) under non-optimal growth conditions, can be optimized by post growth thermal annealing to match the performance of optimally grown structures. We report the findings of an annealing study by comparing the photoluminescence spectra, dark current and background concentration of the as-grown and annealed samples. The dark current of the optimally annealed sample is approximately 2 μA/cm² at an electric field of 100 kV/cm, and is the lowest reported to date for InGaAsN photodetectors with a cut-off wavelength of 1.3 μm. Evidence of lower unintentional background concentration after annealing at a sufficiently high temperature, is also presented.

Citation Download Citation

Siew Li Tan, Lionel J. J. Tan, Yu Ling Goh, Shiyong Zhang, Jo Shien Ng, John P. R. David, Igor P. Marko, Jeremy Allam, Stephen J. Sweeney, and Alfred R. Adams "Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing", Proc. SPIE 7726, Optical Sensing and Detection, 77261M (13 May 2010); https://doi.org/10.1117/12.853912

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