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30 June 1987 Optimized Tri-Layer Resist Technique For Volume Production
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Abstract
Tri-layer resist technique has been developed for volume production of VLIs to achieve 0.8 um line and space pattern using an NA 0.35 stepper. The 0.8 um feature process was done mostly by optimizing normality of developer for top-layer resist. Obtained resolution dep ends strongly on normality of the developer. The lower normality gives much wider latitude to CD control. Possibility of application of tri-layer resist process whose struc,ture con-sists of top-layer resist, middle-layer silicon resin, and underlayer resist was examined.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Kawamura, J. Konno, K. Inayoshi, and T. Takada "Optimized Tri-Layer Resist Technique For Volume Production", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940357
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