Development of a far-infrared Ge:Ga monolithic array for a possible application to SPICA

Mai Shirahata; Shuhei Kamiya; Shuji Matsuura; Mitsunobu Kawada; Yoshihiro Sawayama; Yasuo Doi; Takao Nakagawa; Takehiko Wada; Hidehiro Kawada; Ybe Creten; Burak Okcan; Walfried Raab; Albrecht Poglitsch

doi:10.1117/12.857772

15 July 2010 Development of a far-infrared Ge:Ga monolithic array for a possible application to SPICA

Mai Shirahata, Shuhei Kamiya, Shuji Matsuura, Mitsunobu Kawada, Yoshihiro Sawayama, Yasuo Doi, Takao Nakagawa, Takehiko Wada, Hidehiro Kawada, Ybe Creten, Burak Okcan, Walfried Raab, Albrecht Poglitsch

Author Affiliations +

Proceedings Volume 7741, Millimeter, Submillimeter, and Far-Infrared Detectors and Instrumentation for Astronomy V; 77410B (2010) https://doi.org/10.1117/12.857772
Event: SPIE Astronomical Telescopes + Instrumentation, 2010, San Diego, California, United States

Abstract

We present the current status of the development of a far-infrared monolithic Ge:Ga photoconductor array proposed for the SAFARI instrument onboard SPICA, which is a future infrared space mission. SPICA has a large (3-m class) cooled (<6 K) telescope, which enables us to make astronomical observations with high spatial resolution and unprecedented sensitivity in the mid- and far-infrared wavelength. As a candidate detector to cover the 45-110 μm band of a far-infrared focal plan instrument of SAFARI, we are developing a large format monolithic Ge:Ga array. The monolithic Ge:Ga array is directly connected to cryogenic readout electronics (CRE) using the Au-Indium bumping technology. Our goal is to develop a 64×64 Ge:Ga array, on the basis of existing technologies and experience in making the 3×20 Ge:Ga monolithic arrays for the AKARI satellite. In order to realize a larger format array with better sensitivity than that of the AKARI array, we have been making some technical improvements; (1) development of the Au-In bumping technology to realize the large format array, (2) optimization of the structure of the transparent electrode to achieve the better sensitivity, (3) development of an anti-reflection coating to reduce interference fringe between the Ge substrate, and (4) Use of the low-noise cryogenic readout electronics with low power consumption. We fabricated the prototype 5×5 Ge:Ga arrays to demonstrate and evaluate the properties of monolithic array. We demonstrate experimentally the feasibility of these elemental technologies, and also show the results of performance measurements for the prototype Ge:Ga arrays.

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Mai Shirahata, Shuhei Kamiya, Shuji Matsuura, Mitsunobu Kawada, Yoshihiro Sawayama, Yasuo Doi, Takao Nakagawa, Takehiko Wada, Hidehiro Kawada, Ybe Creten, Burak Okcan, Walfried Raab, and Albrecht Poglitsch "Development of a far-infrared Ge:Ga monolithic array for a possible application to SPICA", Proc. SPIE 7741, Millimeter, Submillimeter, and Far-Infrared Detectors and Instrumentation for Astronomy V, 77410B (15 July 2010); https://doi.org/10.1117/12.857772

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