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16 July 2010 Characterization of a ΣΔ-based CMOS monolithic detector
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Abstract
This paper is a progress report of the design and characterization of a monolithic CMOS detector with an on-chip ΣΔ ADC. A brief description of the design and operation is given. Backside processing steps to allow for backside illumination are summarized. Current characterization results are given for pre- and post-thinned detectors. Characterization results include measurements of: gain photodiode capacitance, dark current, linearity, well depth, relative quantum efficiency, and read noise. Lastly, a detector re-design is described; and initial measurements of its photodiode capacitance and read noise are presented.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brandon J. Hanold, Donald F. Figer, Brian Ashe, Thomas Montagliano, Donald J. Stauffer, Zeljko Ignjatovic, Danijel Maricic, Shouleh Nikzad, and Todd J. Jones "Characterization of a ΣΔ-based CMOS monolithic detector", Proc. SPIE 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV, 77420A (16 July 2010); https://doi.org/10.1117/12.857176
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