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19 July 2010 First results from electrical qualification measurements on DEPFET pixel detector
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We report on the first results from a new setup for electrical qualification measurements of DEPFET pixel detector matrices. In order to measure the transistor properties of all pixels, the DEPFET device is placed into a benchtest setup and electrically contacted via a probecard. Using a switch matrix, each pixel of the detector array can be addressed individually for characterization. These measurements facilitate to pre-select the best DEPFET matrices as detector device prior to the mounting of the matrix and allow to investigate topics like the homogeneity of transistor parameters on device, wafer and batch level in order to learn about the stability and reproducibility of the production process. Especially with regard to the detector development for the IXO Wide Field Imager (WFI), this yield learning will be an important tool. The first electrical qualification measurements with this setup were done on DEPFET macropixel detector flight hardware, which will form the FPAs of the Mercury Imaging X-ray Spectrometer (MIXS) on board of the 5th ESA cornerstone mission BepiColombo. The DEPFET array consists of 64×64 macropixel for which the transfer, output and clear characteristics were measured.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Petra Majewski, Ladislav Andricek, Thomas Lauf, Peter Lechner, Gerhard Lutz, Jonas Reiffers, Rainer Richter, Gerhard Schaller, Martina Schnecke, Florian Schopper, Heike Soltau, Alexander Stefanescu, Lothar Strüder, and Johannes Treis "First results from electrical qualification measurements on DEPFET pixel detector", Proc. SPIE 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV, 77421H (19 July 2010);


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