Paper
22 July 2010 Characterization of multicolor type-II InAs/GaSb strained-layer superlattice photodetectors for use in astronomical observation
Andre F. Wong, Matthew J. Nelson, Elena A. Plis, Michael F. Skrutskie, Lihong Yao, Tom Vandervelde, Sanjay Krishna, Hasul Kim, Arezou Khoshakhlagh, Stephen A. Myers
Author Affiliations +
Abstract
We report on the testing of a set of InAs/GaSb multicolor strained-layer superlattice photodetectors and Dotin- Well detectors grown with InAs dots in InGaAs/GaAs wells fabricated by the Center for High Technology Materials at the University of New Mexico. These devices are 2-color devices sensitive to near-IR and mid-IR wavelengths. The wavelength sensitivities of these devices are a function of the applied forward and reverse bias. We present measurements of the dark current and relative spectral response of these photodetectors measured at both cryogenic and room temperatures.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andre F. Wong, Matthew J. Nelson, Elena A. Plis, Michael F. Skrutskie, Lihong Yao, Tom Vandervelde, Sanjay Krishna, Hasul Kim, Arezou Khoshakhlagh, and Stephen A. Myers "Characterization of multicolor type-II InAs/GaSb strained-layer superlattice photodetectors for use in astronomical observation", Proc. SPIE 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV, 774223 (22 July 2010); https://doi.org/10.1117/12.857786
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KEYWORDS
Laser sintering

Sensors

Astronomy

Monochromators

Superlattices

Mid-IR

Quantum wells

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