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27 May 2010Advanced mask-to-mask overlay analysis for next generation
technology node reticles
Double Patterning Lithography (DPL) for next-generation wafer exposure is placing greater demands on the
requirements for pattern placement accuracy on photomasks: the DPL mask pair must now meet the pattern placement
specifications that a single mask was required to meet in previous generations. As a result, each mask in the mask pair
must individually conform to much tighter mask registration specs. Minimizing all sources of systematic overlay error
has become critical. In addition, the mask-to-mask overlay between the two masks comprising the DPL pair must be
measured-a methodology shift from the current practice of referencing mask registration error only to design data.
Characterizing mask-to-mask overlay error requires the ability to measure pattern placement errors using in-die
structures on reticle pairs. Today's analysis methods do not allow for comparison of registration maps based on different
site locations. This gap has created a lack of information about the true overlay impact of mask-to-mask registration
errors on masks with few or no common features.
A new mask-to-mask overlay analysis method is demonstrated that provides new flexibility for mask-to-mask
comparison. This new method enables mask manufacturers to meet fab requirements for DPL, and it enables
semiconductor manufacturers to verify if overlay deviations are within acceptable limits.
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Klaus-Dieter Roeth, Frank Laske, Karl-Heinrich Schmidt, Dieter Adam, Oliver Ache, David Ilsen, "Advanced mask-to-mask overlay analysis for next generation technology node reticles," Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 77480L (27 May 2010); https://doi.org/10.1117/12.867720