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25 May 2010 New type of haze formation on masks fabricated with Mo-Si blanks
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Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 774811 (2010) https://doi.org/10.1117/12.864478
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan
Abstract
In our paper we make an analysis of conditions for the haze development on photomask fabricated on Mo-Si containing substrates. We bring in focus cases of haze formation on masks with intrinsically very low contaminants level and being exposed in very well controlled atmosphere. There are clear indications that this new type of haze formation deviates from the generally accepted models not only with respect to the formation mechanisms but also with regard to the chemical composition of the haze products. In our analysis we speculate that the new haze type formation is closely related to the earlier reported CD degradation observed on Mo-Si masks. We also analyze the hypothesis that the ingredients for the haze formation are not only airborne contaminants and/or traces on the mask surface, but are also provided by the substrate material. Finally we present and discuss experimental data in the view of the advanced models.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Foca, A. Tchikoulaeva, B. Sass, C. West, P. Nesladek, and R. Horn "New type of haze formation on masks fabricated with Mo-Si blanks", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774811 (25 May 2010); https://doi.org/10.1117/12.864478
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