Performance and stability of mask process correction for EBM-7000

Yasuko Saito; George Chen; Jen-Shiang Wang; Shufeng Bai; Rafael Howell; Jiangwei Li; Jun Tao; Doug VanDenBroeke; Jim Wiley; Tadahiro Takigawa; Takayuki Ohnishi; Takashi Kamikubo; Shigehiro Hara; Hirohito Anze; Yoshiaki Hattori; Shuichi Tamamushi

doi:10.1117/12.867969

26 May 2010 Performance and stability of mask process correction for EBM-7000

Yasuko Saito, George Chen, Jen-Shiang Wang, Shufeng Bai, Rafael Howell, Jiangwei Li, Jun Tao, Doug VanDenBroeke, Jim Wiley, Tadahiro Takigawa, Takayuki Ohnishi, Takashi Kamikubo, Shigehiro Hara, Hirohito Anze, Yoshiaki Hattori, Shuichi Tamamushi

Author Affiliations +

Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 774814 (2010) https://doi.org/10.1117/12.867969
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan

Abstract

In order to support complex optical masks today and EUV masks in the near future, it is critical to correct mask patterning errors with a magnitude of up to 20nm over a range of 2000nm at mask scale caused by short range mask process proximity effects. A new mask process correction technology, MPC+, has been developed to achieve the target requirements for the next generation node. In this paper, the accuracy and throughput performance of MPC+ technology is evaluated using the most advanced mask writing tool, the EBM-7000¹), and high quality mask metrology . The accuracy of MPC+ is achieved by using a new comprehensive mask model. The results of through-pitch and through-linewidth linearity curves and error statistics for multiple pattern layouts (including both 1D and 2D patterns) are demonstrated and show post-correction accuracy of 2.34nm 3σ for through-pitch/through-linewidth linearity. Implementing faster mask model simulation and more efficient correction recipes; full mask area (100cm²) processing run time is less than 7 hours for 32nm half-pitch technology node. From these results, it can be concluded that MPC+ with its higher precision and speed is a practical technology for the 32nm node and future technology generations, including EUV, when used with advance mask writing processes like the EBM-7000.

Citation Download Citation

Yasuko Saito, George Chen, Jen-Shiang Wang, Shufeng Bai, Rafael Howell, Jiangwei Li, Jun Tao, Doug VanDenBroeke, Jim Wiley, Tadahiro Takigawa, Takayuki Ohnishi, Takashi Kamikubo, Shigehiro Hara, Hirohito Anze, Yoshiaki Hattori, and Shuichi Tamamushi "Performance and stability of mask process correction for EBM-7000", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774814 (26 May 2010); https://doi.org/10.1117/12.867969

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available