Translator Disclaimer
27 May 2010 Challenges in flare correction in EUVL lithography for half pitch 22-nm generation
Author Affiliations +
Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 774826 (2010)
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan
We are focusing on the establishment of a flare correction technique for half pitch (HP) 22-nm generation in Extreme Ultra Violet Lithography (EUVL). However, there are some difficulties in the areas of flare calculation and edge biasing, associated with flare correction because of the tighter CD control requirements. In our previous work, we investigated the feasibility of an improved flare calculation and a new way of edge biasing. For the flare calculation, we adopted a short-range flare kernel method, which calculates short-range flare using a fine mesh only at the edges of patterns that require correction. From the simulation and experimental results of this method, we confirmed that it can calculate flare value accurately in a reasonable runtime. On the other hand, since the edge biasing has pattern dependency the work has to be customized accordingly, and that can lead to labor intensive task of pattern-dependent biasing. To address this problem, we began to explore the usefulness of model-based flare correction that has been improved where it can modulate the aerial image according to the flare effect during model-based OPC. For this work, we prepared a test mask containing line-and-space (L/S) patterns of several pitches with different flare levels. We then evaluated the accuracy of the model-based flare correction by simulating the corrected L/S patterns using a rigorous lithography simulation with 3-D mask stack structure. As a result, the CD error range was found to be from - 1.56 to 1.12 nm, which is within ±2 nm (±10 % of the minimum target CD). It is thus concluded that the model-based flare correction can deliver high accuracy results even where OPCs are also involved.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taiga Uno, Yukiyasu Arisawa, Hajime Aoyama, and Toshihiko Tanaka "Challenges in flare correction in EUVL lithography for half pitch 22-nm generation", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774826 (27 May 2010);


Study of model based etch bias retarget for OPC
Proceedings of SPIE (March 03 2010)
Model-based mask verification
Proceedings of SPIE (November 01 2007)
Full chip correction of EUV design
Proceedings of SPIE (March 20 2010)

Back to Top