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7 June 2010Results from a new 193nm die-to-database reticle inspection platform
A new 193nm wavelength high resolution reticle defect inspection platform has been developed for both die-to-database
and die-to-die inspection modes. In its initial configuration, this innovative platform has been designed to meet the
reticle qualification requirements of the IC industry for the 22nm logic and 3xhp memory generations (and shrinks) with
planned extensions to the next generation. The 22nm/3xhp IC generation includes advanced 193nm optical lithography
using conventional RET, advanced computational lithography, and double patterning. Further, EUV pilot line
lithography is beginning. This advanced 193nm inspection platform has world-class performance and the capability to
meet these diverse needs in optical and EUV lithography.
The architecture of the new 193nm inspection platform is described. Die-to-database inspection results are shown on a
variety of reticles from industry sources; these reticles include standard programmed defect test reticles, as well as
advanced optical and EUV product and product-like reticles. Results show high sensitivity and low false and nuisance
detections on complex optical reticle designs and small feature size EUV reticles. A direct comparison with the existing
industry standard 257nm wavelength inspection system shows measurable sensitivity improvement for small feature
sizes
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William H. Broadbent, David S Alles, Michael T. Giusti, Damon F. Kvamme, Rui-fang Shi, Weston L. Sousa, Robert Walsh, Yalin Xiong, "Results from a new 193nm die-to-database reticle inspection platform," Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774828 (7 June 2010); https://doi.org/10.1117/12.868417