In-Process Linewidth Measurement Of Polysilicon Gates Using A Scanning Electron Microscope

Fran Robb

doi:10.1117/12.940415

17 April 1987 In-Process Linewidth Measurement Of Polysilicon Gates Using A Scanning Electron Microscope

Fran Robb

Proceedings Volume 0775, Integrated Circuit Metrology, Inspection, & Process Control; (1987) https://doi.org/10.1117/12.940415
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

SEM measurement of uncoated samples is not as easy as the salesmen would like us to believe! Despite the relatively "simple" sample, optimizing for reproducible submicron linewidth measurements of polysilicon gates was not trivial. Beam energy was shown to control both the signal-to-noise and the slope of the measurement signal, while beam exposure time was found to cause systematic linewidth changes. Optimized measurements utilized a 2.3 kV beam energy, controlled beam exposure times, and a 60% threshold level. No damage was measured on MOS devices exposed at 2.3 kV, at least when such measurements were followed by the anneals typical for MOS process flows.

Citation Download Citation

Fran Robb "In-Process Linewidth Measurement Of Polysilicon Gates Using A Scanning Electron Microscope", Proc. SPIE 0775, Integrated Circuit Metrology, Inspection, & Process Control, (17 April 1987); https://doi.org/10.1117/12.940415

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