Paper
22 September 2010 Full-wafer thermal imaging in ultrahigh epitaxy tools
Bernard Paquette, André Fekecs, Badii Gsib, Hubert Pelletier, Richard Arès
Author Affiliations +
Proceedings Volume 7750, Photonics North 2010; 77500O (2010) https://doi.org/10.1117/12.872967
Event: Photonics North 2010, 2010, Niagara Falls, Canada
Abstract
The surface temperature distribution of a GaAs wafer, heated under vacuum, has been measured using a digital camera. A method is proposed to remove parasitic signals from the image. The accuracy of the thermal image is validated by comparing the results with a separate measurement from absorption band-edge spectroscopy (ABES). The thermal imaging data are observed to be within the experimental error from the ABES technique for the entire surface of the wafer. We observe a radial temperature profile with a center-to-edge difference that varies as a function of the central temperature. A difference of 25 °C is observed for a central temperature of 565 °C. This difference increases with the wafer temperature, confirming that it is due to a net heat flux escaping the wafer by its edge, which is in contact with a graphite holder. Based on these results, a solution is proposed in which the graphite wafer holder is replaced by a ceramic version.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernard Paquette, André Fekecs, Badii Gsib, Hubert Pelletier, and Richard Arès "Full-wafer thermal imaging in ultrahigh epitaxy tools", Proc. SPIE 7750, Photonics North 2010, 77500O (22 September 2010); https://doi.org/10.1117/12.872967
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Thermography

Temperature metrology

Cameras

Epitaxy

Ceramics

Gallium arsenide

Back to Top