Total losses analysis and calculations for PbSe/PbSrSe multiple quantum well structures

M. Khodr

doi:10.1117/12.858443

27 August 2010 Total losses analysis and calculations for PbSe/PbSrSe multiple quantum well structures

M. Khodr

Proceedings Volume 7764, Nanoengineering: Fabrication, Properties, Optics, and Devices VII; 77640N (2010) https://doi.org/10.1117/12.858443
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

In order for laser oscillation to occur, the modal gain at the lasing photon energy must equal the total losses. In this work, we analyze and calculate the total losses due to the free carrier absorption, optical waveguide scattering and the laser cavity end losses for PbSe/Pb_0.934Sr_0.066 Se quantum well laser structures. The small confinement factor value causes the free carrier absorption loss to be negligible. The calculated scattering loss values showed a decreasing order for the MQW, MMQW and SCH-SQW structures, for a surface roughness amplitude of 10nm. Increasing the surface roughness amplitude increases these scattering losses even further. However, the calculated cavity loss calculations showed that its values are in an increasing order for the MQW (or MMQW) and SCH-SQW structures. These cavity losses are lowest for uncoated cavity ends. Coating these ends with a quarter wavelength BaF2 layer increases the total cavity loss. In addition, coating the cavity ends with alternating quarter wavelength layers of BaF₂ and CaF₂ also results in an increase in the cavity loss. The increase in cavity loss due to coating is caused by the decrease in the mirrors' reflectivity values. These results show that coating with fluoride layers can best be utilized in applications where high transitivity values are needed.

Citation Download Citation

M. Khodr "Total losses analysis and calculations for PbSe/PbSrSe multiple quantum well structures", Proc. SPIE 7764, Nanoengineering: Fabrication, Properties, Optics, and Devices VII, 77640N (27 August 2010); https://doi.org/10.1117/12.858443

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