Paper
8 September 2010 Modeling study for developing CdZnTe(CdSe)/CIGS tandem solar cells
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Abstract
Based on Crosslight APSYS, single junction ZnTe/CdSe, CdZnTe/CdSe and CIGS/CdS solar cells as well as CdZnTe(CdSe)/CIGS tandem cells are modeled. Basic physical quantities like band diagrams, optical absorption and generation are obtained. Quantum efficiency and I-V curves are presented. The results are discussed with respect to the interface recombination velocity and the related material defect trap states for ZnTe/CdSe single junction solar cells and the top TCO layer affinity for tandem cells. The projected efficiency obtained is 28% for one of the modeled twoterminal tandem cells. The modeling results give possible clues for developing CdZnTe(CdSe)/CIGS tandem solar cells with increased efficiency.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. G. Xiao, Z. Q. Li, M. Lestrade, and Z. M. Simon Li "Modeling study for developing CdZnTe(CdSe)/CIGS tandem solar cells", Proc. SPIE 7771, Thin Film Solar Technology II, 77710K (8 September 2010); https://doi.org/10.1117/12.860958
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Cited by 5 scholarly publications.
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KEYWORDS
Solar cells

Tandem solar cells

Transparent conductors

Copper indium gallium selenide

Absorption

Interfaces

Thin film solar cells

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