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30 August 2010 Organic field-effect transistors applicable for gas and ion detection
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Abstract
Aside from other target applications, organic field-effect transistors (OFETs) are also promising devices for sensing various kinds of analytes, including gases, ions and biomolecules. In this work ion-sensitive polymer-based OFETs will be discussed. In detail, operational device instabilities caused by the movement of mobile ions in poly(3-hexylthiophene)-based OFETs are investigated, when (a) an ion-containing gate dielectric, polyvinyl alcohol (PVA), is applied in a top-gate architecture and (b) ions are deliberately added to the organic semiconductor in a bottom-gate architecture. The underlying mechanisms for the observed source-to-drain channel current drifts upon bias stress are thoroughly explained. In addition, device instabilities due to mobile ions within the dielectric are demonstrated with rigid and flexible PVA-based OFETs including inkjet-printed source/drain electrodes and a meander-shaped top-gate architecture, the latter enabling the realization of smart, integrated and low-cost OFET-based sensor systems.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Klug, K. Schmoltner, and E. J. W. List "Organic field-effect transistors applicable for gas and ion detection", Proc. SPIE 7779, Organic Semiconductors in Sensors and Bioelectronics III, 77790G (30 August 2010); https://doi.org/10.1117/12.861602
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