Imaging penetrating radiation through ion photon emission microscopy

Khalid Hattar; Janelle V. Branson; Cody J. Powell; Gyorgy Vizkelethy; Paolo Rossi; Barney L. Doyle

doi:10.1117/12.864157

2 September 2010 Imaging penetrating radiation through ion photon emission microscopy

Khalid Hattar, Janelle V. Branson, Cody J. Powell, Gyorgy Vizkelethy, Paolo Rossi, Barney L. Doyle

Proceedings Volume 7806, Penetrating Radiation Systems and Applications XI; 78060C (2010) https://doi.org/10.1117/12.864157
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States

Abstract

The ion photon emission microscope (IPEM), a new radiation effects microscope for the imaging of single event effects from penetrating radiation, is being developed at Sandia National Laboratories and implemented on the 88" cyclotron at Lawrence Berkeley National Laboratories. The microscope is designed to permit the direct correlation between the locations of high-energy heavy-ion strikes and single event effects in microelectronic devices. The development of this microscope has required the production of a robust optical system that is compatible with the ion beam lines, design and assembly of a fast single photon sensitive measurement system to provide the necessary coincidence, and the development and testing of many scintillating films. A wide range of scintillating material for application to the ion photon emission microscope has been tested with few meeting the stringent radiation hardness, intensity, and photon lifetime requirements. The initial results of these luminescence studies and the current operation of the ion photon emission microscope will be presented. Finally, the planned development for future microscopes and ion luminescence testing chambers will be discussed.

Citation Download Citation

Khalid Hattar, Janelle V. Branson, Cody J. Powell, Gyorgy Vizkelethy, Paolo Rossi, and Barney L. Doyle "Imaging penetrating radiation through ion photon emission microscopy", Proc. SPIE 7806, Penetrating Radiation Systems and Applications XI, 78060C (2 September 2010); https://doi.org/10.1117/12.864157

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