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27 August 2010 Performance of InAsSb-based infrared detectors with nBn design
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Our group is investigating nBn detectors based on bulk InAs(1-x)Sb(x) absorber (n) and contacts (n) with an AlAs(1-x)Sb(x) barrier (B). The wide-band-gap barrier material exhibits a large conduction band offset and small valence band offset with respect to the narrow-band-gap absorber material. An important matter to explore in this design is the barrier parameters (material, composition and doping concentration) and how they effect the operation of the device. This paper investigates AlAs(1-x)Sb(x) barriers with different compositions and doping levels and their effect on detector characteristics, in particular, dark current density, responsivity and specific detectivity.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. A. Myers, A. Khoshakhlagh, J. Mailfert, P. Wanninkhof, E. Plis, M. N. Kutty, H. S. Kim, N. Gautam, B. Klein, E. P. G. Smith, and S. Krishna "Performance of InAsSb-based infrared detectors with nBn design", Proc. SPIE 7808, Infrared Remote Sensing and Instrumentation XVIII, 780805 (27 August 2010);

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