Intersubband absorption based upon modulation doped transistor heterostructures

J. Yao; W. Zheng; H. Opper; J. Cai; G. W. Taylor

doi:10.1117/12.859744

14 September 2010 Intersubband absorption based upon modulation doped transistor heterostructures

J. Yao, W. Zheng, H. Opper, J. Cai, G. W. Taylor

Proceedings Volume 7817, Nanophotonics and Macrophotonics for Space Environments IV; 78170C (2010) https://doi.org/10.1117/12.859744
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States

Abstract

Intersubband absorption is reported in a new modulation doped structure using strained InGaAs quantum wells (QWs) that support transistor operation. Well defined absorption peaks (1000 cm^-1 to 1700 cm^-1) from 8μm to 11.5μm have been obtained using either n- or p- type modulation doped wells. The absorption wavelength may be extended to as low as 3.2μm by using quantum dots placed within the quantum well. Both n and p well responses show strong polarization dependence with maximum values at incident angles of 65-70° and peak positions which are adjusted by the quantum well parameters. The p well shows a double peaked response with a peak separation of about 1.5μm which results from heavy and light hole contributions. A thyristor infrared detector model has been established based upon the intersubband absorption mechanism and simulation results are shown.

Citation Download Citation

J. Yao, W. Zheng, H. Opper, J. Cai, and G. W. Taylor "Intersubband absorption based upon modulation doped transistor heterostructures", Proc. SPIE 7817, Nanophotonics and Macrophotonics for Space Environments IV, 78170C (14 September 2010); https://doi.org/10.1117/12.859744

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