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22 March 2011 Multiple gain cavity for power scaling in passively mode-locked semiconductor disk laser
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Proceedings Volume 7822, Laser Optics 2010; 782209 (2011) https://doi.org/10.1117/12.884968
Event: Laser Optics 2010, 2010, St. Petersburg, Russian Federation
Abstract
The concept of multiple gain element cavity was applied for power scaling a passively mode-locked semiconductor disk laser. 400 mW of average output power for the laser with a single gain element was boosted to 900 mW for the laser with the dual gain cavity. The increase in output power was accompanied by an increase in the order of mode-locking harmonic.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Rantamäki, E. J. Saarinen, J. Lyytikäinen, and O. G. Okhotnikov "Multiple gain cavity for power scaling in passively mode-locked semiconductor disk laser", Proc. SPIE 7822, Laser Optics 2010, 782209 (22 March 2011); https://doi.org/10.1117/12.884968
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