Development and characterization of a thinner binary mask absorber for 22-nm node and beyond

Tom Faure; Karen Badger; Louis Kindt; Yutaka Kodera; Toru Komizo; Shinpei Kondo; Takashi Mizoguchi; Satoru Nemoto; Kazunori Seki; Tasuku Senna; Richard Wistrom; Amy Zweber; Kazuhiro Nishikawa; Yukio Inazuki; Hiroki Yoshikawa

doi:10.1117/12.864130

24 September 2010 Development and characterization of a thinner binary mask absorber for 22-nm node and beyond

Tom Faure, Karen Badger, Louis Kindt, Yutaka Kodera, Toru Komizo, Shinpei Kondo, Takashi Mizoguchi, Satoru Nemoto, Kazunori Seki, Tasuku Senna, Richard Wistrom, Amy Zweber, Kazuhiro Nishikawa, Yukio Inazuki, Hiroki Yoshikawa

Author Affiliations +

Proceedings Volume 7823, Photomask Technology 2010; 78230J (2010) https://doi.org/10.1117/12.864130
Event: SPIE Photomask Technology, 2010, Monterey, California, United States

Abstract

The lithography challenges posed by the 22 nm node continue to place stringent requirements on photomasks. The dimensions of the mask features continue to shrink more deeply into the sub-wavelength scale. In this regime residual mask electromagnetic field (EMF) effects due to mask topography can degrade the imaging performance of critical mask patterns by degrading the common lithography process window and by magnifying the impact of mask errors or MEEF. Based on this, an effort to reduce the mask topography effect by decreasing the thickness of the mask absorber was conducted. In this paper, we will describe the results of our effort to develop and characterize a binary mask substrate with an absorber that is approximately 20-25% thinner than the absorber on the current Opaque MoSi on Glass (OMOG) binary mask substrate. For expediency, the thin absorber development effort focused on using existing absorber materials and deposition methods. It was found that significant changes in film composition and structure were needed to obtain a substantially thinner blank while maintaining an optical density of 3.0 at 193 nm. Consequently, numerous studies to assess the mask making performance of the thinner absorber material were required and will be described. During these studies several significant mask making advantages of the thin absorber were discovered. The lower film stress and thickness of the new absorber resulted in improved mask flatness and up to a 60% reduction in process-induced mask pattern placement change. Improved cleaning durability was another benefit. Furthermore, the improved EMF performance of the thinner absorber [1] was found to have the potential to relieve mask manufacturing constraints on minimum opaque assist feature size and opaque corner to corner gap. Based on the results of evaluations performed to date, the thinner absorber has been found to be suitable for use for fabricating masks for the 22 nm node and beyond.

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Tom Faure, Karen Badger, Louis Kindt, Yutaka Kodera, Toru Komizo, Shinpei Kondo, Takashi Mizoguchi, Satoru Nemoto, Kazunori Seki, Tasuku Senna, Richard Wistrom, Amy Zweber, Kazuhiro Nishikawa, Yukio Inazuki, and Hiroki Yoshikawa "Development and characterization of a thinner binary mask absorber for 22-nm node and beyond", Proc. SPIE 7823, Photomask Technology 2010, 78230J (24 September 2010); https://doi.org/10.1117/12.864130

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