Translator Disclaimer
29 September 2010 SMO mask requirements for low k1 lithography
Author Affiliations +
This paper tries to clarify the requirements for Source-Mask co-Optimization (SMO) type complex masks for low k1 technology nodes using a dedicated test mask. The current status of mask CD requirements and inspection capability for Free Form (FF) SRAFs which give wider process window are discussed by comparing with Rectangular Shape (RS) SRAFs. From CD deviation analysis with CD bias change at both main and SRAF patterns, the importance of CD control at entire SRAF is emphasized although the partial lack of SRAF seems to give less impact on the main pattern lithography performance. It is also suggested that SRAF printability of FF-SRAF needs to be carefully controlled with mask bias error consideration. To identify the defects which give impact on litho performance, simulation-based defect printability prediction (M-LMC) using inspection images is evaluated and found to be an important enabler for complex mask inspection. The simulation-image based defect analysis helps to reduce the nuisance defects, and greatly saves analysis time of measurement on Aerial Image Measurement System (AIMSTM). To introduce the complex free form mask into production, mask-writing shot-count reduction is also evaluated. It is shown that fragmentation using Model- Based (MB) Mask Data Preparation (MDP) effectively reduces the mask writing shot counts with using overlapping of the patterns.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seiji Nagahara, Kazuyoshi Kawahara, Hiroshi Yamazaki, Akihiko Ando, Masayuki Naganuma, Kazuyuki Yoshimochi, Takayuki Uchiyama, Ken Nakashima, Hidemichi Imai, Katsuya Hayano, Hidekazu Migita, and Eiji Tsujimoto "SMO mask requirements for low k1 lithography", Proc. SPIE 7823, Photomask Technology 2010, 782310 (29 September 2010);

Back to Top