A systematic study of source error in source mask optimization

C. Alleaume; E. Yesilada; V. Farys; L. Depre; V. Arnoux; Zhipan Li; Y. Trouiller; A. Serebriakov

doi:10.1117/12.864246

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1 October 2010 A systematic study of source error in source mask optimization

C. Alleaume, E. Yesilada, V. Farys, L. Depre, V. Arnoux, Zhipan Li, Y. Trouiller, A. Serebriakov

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Proceedings Volume 7823, Photomask Technology 2010; 782312 (2010) https://doi.org/10.1117/12.864246
Event: SPIE Photomask Technology, 2010, Monterey, California, United States

Abstract

Source Mask Optimization (SMO) technique is an advanced RET with the goal of extending optical lithography lifetime by enabling low k1 imaging [1,2]. Most of the literature concerning SMO has so far focused on PV (process variation) band, MEEF and PW (process window) aspects to judge the performance of the optimization as in traditional OPC [3]. In analogy to MEEF impact for low k1 imaging we investigate the source error impact as SMO sources can have rather complicated forms depending on the degree of freedom allowed during optimization. For this study we use Tachyon SMO tool on a 22nm metal design test case. A free form and parametric source solutions are obtained using MEEF and PW requirements as main criteria. For each type of source, a source perturbation is introduced to study the impact on lithography performance. Based on the findings we conclude on the choice of freeform or parametric as a source and the importance of source error in the optimization process.

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C. Alleaume, E. Yesilada, V. Farys, L. Depre, V. Arnoux, Zhipan Li, Y. Trouiller, and A. Serebriakov "A systematic study of source error in source mask optimization", Proc. SPIE 7823, Photomask Technology 2010, 782312 (1 October 2010); https://doi.org/10.1117/12.864246

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