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24 September 2010 Design for e-beam: design insights for direct-write maskless lithography
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Abstract
Designers always want maximum freedom in design, but they understand that chips have to yield and at a reasonable cost. The strong ecosystem support of restricted design rules to make 193i workable for sub-30nm nodes is evidence of this. In direct write e-beam, there are design insights that lead to a tangible improvement in throughout while minimizing the restrictions on the designer. It turns out that a smaller number of primitive cells in a standard cell methodology can enable data compression for multi-beam systems, and enable faster write times for character projection in VSB-based multiple column machines. This requires a co-design of the standard cell library with the stencil mask (either virtual or real) that goes into the machine. This co-design step is required only once per library and not on a design-by-design basis, thus minimizing the impact on designers. 10-20X speedups in e-beam throughput depending on layer are seen in typical layout examples for character projection machines.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aki Fujimura "Design for e-beam: design insights for direct-write maskless lithography", Proc. SPIE 7823, Photomask Technology 2010, 782315 (24 September 2010); https://doi.org/10.1117/12.868483
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