Paper
29 September 2010 Extending a 193 nm mask inspector for 22 nm HP EUV mask inspection
Author Affiliations +
Abstract
Reticle quality and the capability to qualify a reticle remain key issues for EUV Lithography. In this paper, we report on recent advancements that extend the capability of a 193 nm mask inspector to meet requirements for the 22 nm HP / 15 nm Logic node. This work builds upon previous work that was published earlier this year, by D. Wack1, et. al. Meeting these requirements requires development of a number of novel capabilities for mask inspection, including the use of offaxis illumination, various polarization modes, and use of an optimized absorber stack for EUV masks. In addition, we discuss the challenges of inspecting EUV masks in die-to-database mode, and how tone inversion can be successfully modeled. Lastly, we show that this same 193 nm mask inspector, with the use of proprietary algorithms, can be extended to meet industry requirements for EUV phase defect blank inspection.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregg Inderhees, Tao-Yi Fu, Qiang Zhang, and Yalin Xiong "Extending a 193 nm mask inspector for 22 nm HP EUV mask inspection", Proc. SPIE 7823, Photomask Technology 2010, 78231Q (29 September 2010); https://doi.org/10.1117/12.865839
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Cited by 1 scholarly publication.
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KEYWORDS
Photomasks

Inspection

Extreme ultraviolet

Polarization

Extreme ultraviolet lithography

Reticles

Modulation

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