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29 September 2010 Computational lithography and inspection (CLI) and its applications in mask inspection, metrology, review, and repair
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Abstract
At the most advanced technology nodes, such as 32nm, 22nm, and beyond, aggressive OPC and Sub-Resolution Assist Features (SRAFs) on the mask are essential for accurate on-wafer imaging; mask patterns generated by Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO) may also be necessary for production. However, their use results in significantly increased mask complexity, making mask defect disposition more challenging than ever. Computational Lithography and Inspection (CLI) have broad applications in mask inspection, metrology, review, and repair, and provide additional information to assist the operator in making accurate and efficient decisions on defect disposition. In this paper these applications of CLI in mask inspection, off-line review, metrology, and repair are presented and discussed.
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Linyong Pang, Danping Peng, Lin He, Dongxue Chen, and Vikram Tolani "Computational lithography and inspection (CLI) and its applications in mask inspection, metrology, review, and repair", Proc. SPIE 7823, Photomask Technology 2010, 78232H (29 September 2010); https://doi.org/10.1117/12.868034
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