THz imaging with low-cost 130 nm CMOS transistors

Franz Schuster; Maciej Sakowicz; Alexandre Siligaris; Laurent Dussopt; Hadley Videlier; Dominique Coquillat; Frédéric Teppe; Benoît Giffard; Adrien Dobroiu; Thomas Skotnicki; Wojciech Knap

doi:10.1117/12.864877

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20 October 2010 THz imaging with low-cost 130 nm CMOS transistors

Franz Schuster, Maciej Sakowicz, Alexandre Siligaris, Laurent Dussopt, Hadley Videlier, Dominique Coquillat, Frédéric Teppe, Benoît Giffard, Adrien Dobroiu, Thomas Skotnicki, Wojciech Knap

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Proceedings Volume 7837, Millimetre Wave and Terahertz Sensors and Technology III; 783704 (2010) https://doi.org/10.1117/12.864877
Event: SPIE Security + Defence, 2010, Toulouse, France

Abstract

We report on active imaging with CMOS transistors at 300 GHz and 1.05 THz. Two basic focal plane arrays consisting of nMOS transistors and wide-band bow-tie antennas have been implemented in a low-cost 130 nm CMOS technology. Raster scan imaging of objects concealed in a paper envelope has been achieved at 300 GHz with a commercial radiation source. The images clearly reveal the concealed objects with a dynamic range of 35 dB and a resolution of 3 mm. At 1.05 THz, the pixels achieve a responsivity of 50 V/W and a noise equivalent power of 900 pW/Hz^0.5.

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Franz Schuster, Maciej Sakowicz, Alexandre Siligaris, Laurent Dussopt, Hadley Videlier, Dominique Coquillat, Frédéric Teppe, Benoît Giffard, Adrien Dobroiu, Thomas Skotnicki, and Wojciech Knap "THz imaging with low-cost 130 nm CMOS transistors", Proc. SPIE 7837, Millimetre Wave and Terahertz Sensors and Technology III, 783704 (20 October 2010); https://doi.org/10.1117/12.864877

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