Paper
4 November 2010 Microwave signal generation with the frequency-selective sideband injection-locking of semiconductor lasers
Hongbo Xue, Yanying Feng, Zhaoying Zhou, Xiongying Ye, Xiaojia Wang, Xu Chen
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Abstract
Two longitudinally multimode Febry-Perot diode lasers have been sideband injection-locked to the +1 and -1 sidebands of a 3.4GHz electro-optical modulator (EOM). Optical heterodyne measurement showed that powers of 99.5% of the slave laser could be injection-locked to the +1 or -1 sidebands, and the unselected master laser carrier was suppressed down to -24dB. Generally, the long-term stability and efficiency of the injection-locking to the +1 sideband was worse than the -1 due to the asymmetry of the injection-locking bandwidth. The microwave signal at 6.8GHz had a measured 3dB linewidth of less than 200Hz, without considering the noise contribution by the driving signal of the additional acousto-optical modulator. The proposed method will be used for driving the stimulated Raman transitions in a Rubidium based atom gyroscope.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongbo Xue, Yanying Feng, Zhaoying Zhou, Xiongying Ye, Xiaojia Wang, and Xu Chen "Microwave signal generation with the frequency-selective sideband injection-locking of semiconductor lasers", Proc. SPIE 7846, Quantum and Nonlinear Optics, 78460A (4 November 2010); https://doi.org/10.1117/12.869891
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Semiconductor lasers

Microwave radiation

Raman spectroscopy

Modulation

Modulators

Signal generators

Spectrum analysis

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