Pump to Stokes RIN transfer in silicon Raman lasers

Xiqing Liu; Xinzhu Sang; Xiaoxia Liu; Chongxiu Yu

doi:10.1117/12.869975

16 November 2010 Pump to Stokes RIN transfer in silicon Raman lasers

Xiqing Liu, Xinzhu Sang, Xiaoxia Liu, Chongxiu Yu

Proceedings Volume 7847, Optoelectronic Devices and Integration III; 78470G (2010) https://doi.org/10.1117/12.869975
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

The pump-to-Stokes RIN Transfer and its impact on output characteristic in silicon Raman lasers are numerically investigated. The result shows that RIN transfer strongly influence on the output RIN of the chip scale silicon Raman laser. High-frequency RIN transfer show intense oscillation at about10⁹Hz, which is several orders higher than that in Raman fiber laser (about10⁴Hz ). We also find that RIN transfer reaches a peak value at resonance frequencies and decreases with the increasing the free carrier lifetime.

Citation Download Citation

Xiqing Liu, Xinzhu Sang, Xiaoxia Liu, and Chongxiu Yu "Pump to Stokes RIN transfer in silicon Raman lasers", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78470G (16 November 2010); https://doi.org/10.1117/12.869975

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