Micro-ring resonators silicon-based modulator performance improvement

Yan Zhang; Gang Xi; Ting Hu; Wen Qian Zhang

doi:10.1117/12.870236

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15 November 2010 Micro-ring resonators silicon-based modulator performance improvement

Yan Zhang, Gang Xi, Ting Hu, Wen Qian Zhang

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Proceedings Volume 7847, Optoelectronic Devices and Integration III; 78470Q (2010) https://doi.org/10.1117/12.870236
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

Silicon-based electro-optic modulator is a key device that used to implement optical interconnections. The paper is attempt to analyze the Silicon-on-insulator (SOI ) structure characteristics of resonator, according to the transfer function. The spectra response of Single Micro-Ring (SMR) and Double Micro-Ring resonators (DMR) with a ridge cross section on silicon was discussed emphatically. The 3dB bandwidth and the coupling coefficient affection on it were calculated and compared. The relationship between the characteristics of resonators the coupling coefficient was analyzed. The commercial software Rsoft was used to simulate the figures of SMR and DMR respectively. The simulation results show that the 3dB bandwidth of DMR can be achieved much narrower than that of SMR through the optimization design of the structural parameters. And the filter response line is sheerer for the DMR.

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Yan Zhang, Gang Xi, Ting Hu, and Wen Qian Zhang "Micro-ring resonators silicon-based modulator performance improvement", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78470Q (15 November 2010); https://doi.org/10.1117/12.870236

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