A compact optically pumped semiconductor laser emitting at 593 nm

Ruediger von Elm; Soenke Offen; Wolf Seelert; Vasiliy Ostroumov; Dirk Mohrenstecher; Joachim Brunn

doi:10.1117/12.879229

15 February 2011 A compact optically pumped semiconductor laser emitting at 593 nm

Ruediger von Elm, Soenke Offen, Wolf Seelert, Vasiliy Ostroumov, Dirk Mohrenstecher, Joachim Brunn

Proceedings Volume 7912, Solid State Lasers XX: Technology and Devices; 79120G (2011) https://doi.org/10.1117/12.879229
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

We achieved 100mW cw of 593nm by intracavity sum frequency generation in a branched cavity, dual laser set up. Two gain media were used: Nd:YVO4 for generating 1342nm, diode-pumped by 3.7W at 808nm, and an optically pumped semiconductor chip (OPS), designed for 1064nm emission, diode-pumped by 1.7W at 808nm. Due to the short upperstate lifetime of the OPS, the generated 593nm output power was stable.A

Citation Download Citation

Ruediger von Elm, Soenke Offen, Wolf Seelert, Vasiliy Ostroumov, Dirk Mohrenstecher, and Joachim Brunn "A compact optically pumped semiconductor laser emitting at 593 nm", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79120G (15 February 2011); https://doi.org/10.1117/12.879229

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