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3 March 2011 Effects of γ-irradiation on optical, electrical, and laser characteristics of pure and transition metal doped II-VI semiconductors
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Abstract
We report a comprehensive study of gamma-irradiation on optical, electrical, and laser characteristics of pure and transition-metal doped single and polycrystalline ZnS and ZnSe. Polished pure, Cr-doped, and Ag, Au, Cu, Al, In, and Mn co-doped ZnS and ZnSe crystals after absorption and electro-conductivity characterization were gamma-irradiated at doses of 1.37x108, and 1.28x108 rad at +10 and -3°C, respectively. Dynamic RT absorption studies, electro-conductivity measurements and mid-IR lasing were performed for different exposition times of crystals at RT. Cr:ZnSe and Cr:ZnS lasers based on identical gamma-irradiated and non-irradiated crystals featured a very similar pump thresholds, slope efficiencies, and output powers.
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Tetyana Konak, Michael Tekavec, Vladimir V. Fedorov, and Sergey B. Mirov "Effects of γ-irradiation on optical, electrical, and laser characteristics of pure and transition metal doped II-VI semiconductors", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 791229 (3 March 2011); https://doi.org/10.1117/12.875539
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