70% frequency-doubling efficiency of 0.8-W mode-locked picosecond Ti:sapphire laser with external cavity

Tatsuya Ohira; Shingo Maeda; Yuma Takida; Hiroshi Kumagai

doi:10.1117/12.874565

21 February 2011 70% frequency-doubling efficiency of 0.8-W mode-locked picosecond Ti:sapphire laser with external cavity

Tatsuya Ohira, Shingo Maeda, Yuma Takida, Hiroshi Kumagai

Author Affiliations +

Proceedings Volume 7917, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X; 79170A (2011) https://doi.org/10.1117/12.874565
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

The importance of the light source in the UV and VUV region has increased in industrial and scientifical fields. In general, the second harmonic generation of near-infrared coherent light in an external enhancement cavity has been used to obtain high-efficiency and high-power coherent UV lights. However, the pump light of the high average power has been necessary for such high-effective wavelength conversions. We studied high-efficient and simple generation of UV continuous and quasi-continuous waves by optimizing an external cavity and using a BiB₃O₆ (BiBO) as a nonlinear crystal of relatively high nonlinear optical coefficient. We report the generation of high-efficient 389nm coherent light based on the second harmonic generation of a mode-locked Ti:sapphire picosecond pulses laser with BiBO. As a result, more than 500mW of output at 389nm was obtained with the maximum input of 800mW and a maximum efficiency of 63%. Furthermore, considering the reflective loss of output mirror of 389nm light, we could obtain 70% conversion efficiency. This value was one of the best results of the second harmonic generation of less than 1W of average pump power.

Citation Download Citation

Tatsuya Ohira, Shingo Maeda, Yuma Takida, and Hiroshi Kumagai "70% frequency-doubling efficiency of 0.8-W mode-locked picosecond Ti:sapphire laser with external cavity", Proc. SPIE 7917, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, 79170A (21 February 2011); https://doi.org/10.1117/12.874565

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