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21 February 2011 Mid-infrared photonics in silicon
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Abstract
Silicon waveguides have, to date, largely been designed to operate near the telecommunication bands in the near infrared. The mid-infrared (MIR) wavelengths, which range from two to twenty microns, are critical for a number of application areas, including chemical bond spectroscopy and thermal imaging. We show results, using commercially available silicon-on-sapphire wafers, for low-loss (4.0 dB/cm) waveguides and what we believe to be the first working microresonators operating at wavelengths around 5.5 um in silicon guides with Q-values as high as 3.0 k. This talk will discuss the applications for mid-infrared integrated photonics in the silicon system, particularly for sensing and nonlinear optics.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander Spott, Yang Liu, Tom W. Baehr-Jones, Rob Ilic, and Michael Hochberg "Mid-infrared photonics in silicon", Proc. SPIE 7917, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, 79171B (21 February 2011); https://doi.org/10.1117/12.876097
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